| :: GaAs E-pHEMT Low Noise Transistor |
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| Features | |
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- 1.0 dB NF
- 33 dB Gain at 900 MHz
- 23 dBm OIP3 at 900 MHz
- 11 dBm P1dB at 900 MHz
- Supply (Vd, volts): 3.0-5.0
- Lead-free/Green/RoHS-compliant Package
- Package Type: SOT363
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| กแ Performance by Applications |
| Application |
Freq.
Range
(MHz) |
Gain
(dB) |
NF
(dB) |
OP1dB
(dBm) |
OIP3
(dBm)
|
Vs
(V) |
Current
(mA) |
| CDMA |
900 |
33 |
1.0 |
11 |
23 |
5 |
50 |
| PCS |
1800 |
27 |
0.9 |
15 |
30 |
5 |
50 |
| WCDMA |
1950 |
26 |
1.0 |
15 |
29 |
5 |
50 |
| WLAN |
2400-2500 |
22 |
1.1 |
15 |
31 |
5 |
50 |
| GPS |
1575 |
Type
1 |
25 |
1.1 |
10 |
16 |
3 |
7.7 |
Type
2
(Stripline) |
25 |
1.1 |
10 |
19 |
3 |
7.7 |
Type
2
(Stripline) |
30 |
0.8 |
10.5 |
25.5 |
3 |
28 |
| Type
2 |
25 |
1.1 |
10 |
19 |
3 |
7.7 |
| WLAN |
2400-2500 |
17 |
1.3 |
11 |
17 |
3 |
10 |
| 19 |
1.1 |
11 |
15 |
3 |
16 |
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