| :: GaAs E-pHEMT Low Noise Transistor |  |
|
| Features | |
| |
- 1.2 dB NF
- 18 dB Gain at 900 MHz
- 24.5
dBm OIP3 at 900 MHz
- 13 dBm P1dB at 900 MHz
- Supply (Vd, volts):
3.0-4.3
- Lead-free/Green/RoHS-compliant Package
- Package Type: SOT363
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| กแ Performance
by Applications |
| Application | Freq.
Range
(MHz) | Gain
(dB) | NF
(dB) | OP1dB
(dBm) |
OIP3
(dBm) | Vs
(V) | Current
(mA) |
| CDMA | 824-894 | 18 | 1.2 | 13 | 24.5 | 3 | 25 |
| WCDMA |
1920-2170 | 13 |
1.3 |
14 |
27 |
3 |
25 |
DVB-T
(V Band)
|
170 |
14 |
1.8@380MHz |
5 |
16 |
5 |
13 |
| 240 |
14 |
1.8@380MHz |
5.5 |
16.5 |
DVB-T
(U Band)
|
478 |
16 |
1.8 |
6.5 |
18 | 5 |
13 |
| 862 |
15 |
1.6 |
6.5 |
18.5 |
|
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