| :: GaAs E-pHEMT Low Noise Transistor |
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| Features | |
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- 0.65 dB NF
- 18 dB Gain at 900 MHz
- 30 dBm OIP3 at 900 MHz
- 17 dBm P1dB at 900 MHz
- Supply (Vd, volts): 3.1
- Lead-free/Green/RoHS-compliant Package
- Package Type: SOT363
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| กแ Performance by Applications |
| Application |
Freq.
Range
(MHz) |
Gain
(dB) |
NF
(dB) |
OP1dB
(dBm) |
OIP3
(dBm)
|
Vs
(V) |
Current
(mA) |
| LTE |
698 |
20 |
0.55 |
16.5 |
29 |
5 |
48 |
| 787 |
19 |
0.5 |
16.5 |
29 |
| CDMA |
900 |
18 |
0.6 |
17 |
30 |
5 |
48 |
900
Balanced Type
|
900 |
22.8 |
0.61 |
20.2 |
33.3 |
5 |
80 |
1950
High Gain
|
1950 |
15.5 |
0.75 |
18 |
33.5 |
5 |
48 |
1950
Low Noise |
1950 |
13.8 |
0.6 |
19 |
34 |
5 |
48 |
1950
Balanced Type
|
1950 |
15.6 |
0.79 |
19.6 |
35 |
5 |
80 |
| WLAN |
2450 |
13 |
0.9 |
18.5 |
33 |
5 |
48 |
| WiMAX |
3500 |
11 |
2.1 |
18 |
30 |
5 |
48 |
Other
(1200-1900) |
1200 |
18.5 |
0.6 |
17 |
31 |
5 |
48 |
| 1550 |
16.6 |
0.6 |
17.5 |
32 |
| 1900 |
15.9 |
0.7 |
18 |
33 |
| Other |
433 |
23.5 |
0.95 |
16 |
27.5 |
5 |
48 |
| Other |
315 |
22 |
1.0 |
1.6 |
17 |
5 |
11 |
| Other |
433 |
20.5 |
0.9 |
2.5 |
18 |
5 |
11 |
Other
(850-950) |
868 |
15 |
0.8 |
3 |
18.5 |
5 |
11 |
| 915 |
14.5 |
0.7 |
3 |
18.5 |
Satellite
Phone
(1525-1559) |
1525 |
14.5 |
0.55 |
16.5 |
25 |
5 |
15 |
| 1559 |
14 |
0.55 |
16.5 |
25 |
Other
(50-200) |
50 |
18.5 |
1.1 |
7 |
24 |
5 |
15 |
| 200 |
18.5 |
1.0 |
9 |
23 |
Other
(70-2700) |
70 |
17.8 |
1.2 |
15.4 |
28 |
5 |
63 |
| 470 |
17.9 |
1.1 |
16.4 |
29.5 |
| 1500 |
16.8 |
1.2 |
19 |
33 |
| 2700 |
15.3 |
1.3 |
19.5 |
32.5 |
Other
(900-2100) |
900 |
14 |
1.5 |
5 |
19 |
3 |
12 |
| 1500 |
13.5 |
1.5 |
5 |
19.5 |
| 2100 |
13.5 |
1.4 |
5.5 |
20 |
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