| :: GaAs E-pHEMT Low Noise Transistor |
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| Features | |
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- 2.0 dB NF
- 21 dB Gain at 900 MHz
- 34 dBm OIP3 at 900 MHz
- 22 dBm P1dB at 900 MHz
- Supply (Vd, volts): 4.4
- Lead-free/Green/RoHS-compliant Package
- Package Type: DFN-6
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| กแ Performance by Applications |
| Application |
Freq.
Range
(MHz) |
Gain
(dB) |
NF
(dB) |
OP1dB
(dBm) |
OIP3
(dBm)
|
Vs
(V) |
Current
(mA) |
| CDMA |
900 |
21 |
2.0 |
22 |
34 |
5 |
135 |
| WCDMA |
1950 |
15.5 |
1.9 |
22 |
37 |
5 |
135 |
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