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:: GaAs E-pHEMT Low Noise Medium Power Amplifier
Features
  • 1.0 dB NF at 900 MHz
  • 35.5 dB Gain at 900 MHz
  • 45 dBm OIP3 at 900 MHz
  • 29 dBm P1dB at 900 MHz
  • Supply (Vd, volts): 5.0
  • Lead-free/Green/RoHS-compliant Package
  • Package Type: SOIC8
Documents & Downloads

 

■ Application Notes

■ Performance by Applications

Application Freq. Range
(MHz)		 Gain
(dB)		 NF
(dB)		 OP1dB
(dBm)		 OIP3
(dBm)		 VD
(V)		 ID
(mA)
CDMA 824-849 Rx 34.5 1.0 28 43 5 350
869-894 Tx 34 1.0 29 45 5 350
Other 206.5 37.5 2.4 29.5 40 5 350
2300 20 1.5 29.5 46 5 350
2500 19.5 1.6 30 45 5 350
2700 17.5 2.1 28.5 45 5 350
TETRA-1 380 40 2.1 30 41 5 350
440 40.5 2.0 29.5 45 5 350
500 39 2.0 29 44 5 350
TETRA-2 380 35.5 2.8 29 45 5 350
400 35 2.8 29 45.5 5 350
420 34.5 2.8 29 46 5 350
TETRA-3 420 43 0.9 29.5 44 5 350
440 42 0.8 30 45 5 350
460 41 0.8 29.5 44.5 5 350
TETRA-4 460 40 1.8 30 44.5 5 350
480 39 1.9 30 45 5 350
500 38.5 1.95 29.5 44.5 5 350
WCDMA 1920-1980 Rx 22 1.4 29.5 47 5 350
2110-2170 Tx 22.5 1.5 29.5 47 5 350