ASL563 HOME > Products > MMIC Amplifiers  
 
:: GaAs E-pHEMT Low Noise Transistor
Features
  • 1.0 dB NF
  • 33 dB Gain at 900 MHz
  • 23 dBm OIP3 at 900 MHz
  • 11 dBm P1dB at 900 MHz
  • Supply (Vd, volts): 3.0-5.0
  • Lead-free/Green/RoHS-compliant Package
  • Package Type: SOT363
Documents & Downloads

■ Application Notes

■ Performance by Applications

Application Freq. Range
(MHz)
Gain
(dB)
NF
(dB)
OP1dB
(dBm)
OIP3
(dBm)
VD
(V)
ID
(mA)
CDMA 900 33 1 11 23 5 50
GPS (Type1) 1575 (Striplines) 25 1.1 10 16 3 7.7
GPS (Type2) 1575 (Striplines)-1 25 1.1 10 19 3 7.7
1575 (Striplines)-2 27 0.8 11 22 3 14
1575 (Without stripl 25 1.1 10 19 3 7.7
1575 (Striplines)-3 30 0.8 10.5 25.5 3 28
Other 1163-1210 24.5 1.1 10 21 3 7.7
1204-1240 26 1.0 10.5 21 3 7.7
1558-1577 25 1.2 11 18.5 3 7.7
PCS 1800 27 0.9 15 30 5 50
WCDMA 1950 26 1 15 29 5 50
WLAN-1 2400-2500 22 1.1 15 31 5 50
WLAN-2 2400-2500 17 1.3 11 17 3 10
WLAN-3 2400-2500 19 1.1 11 15 3 16