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:: GaAs E-pHEMT Low Noise Transistor
Features
  • 2.0 dB NF
  • 21 dB Gain at 900 MHz
  • 34 dBm OIP3 at 900 MHz
  • 22 dBm P1dB at 900 MHz
  • Supply (Vd, volts): 5.0
  • Lead-free/Green/RoHS-compliant Package
  • Package Type: DFN-6
Documents & Downloads

 

■ Application Notes
■ Performance by Applications
Application Freq. Range
(MHz)		 Gain
(dB)		 NF
(dB)		 OP1dB
(dBm)		 OIP3
(dBm)		 VD
(V)		 ID
(mA)
CDMA 900 21 2 22 34 5 135
WCDMA 1950 15.5 1.9 22 37 5 135