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:: GaAs E-pHEMT Medium Power Amplifier
Features
  • 16.5 dB Gain at 900 MHz
  • 48 dBm OIP3 at 900 MHz
  • 33 dBm P1dB at 900 MHz
  • 4.9 dB NF
  • Single Supply (Vd, volts): 5.0
  • Lead-free/Green/RoHS-compliant Package
  • Package Type: SOIC8
Documents & Downloads

 

 

■ Application Notes


 
■ Performance by Applications
Application Freq. Range
(MHz)		 Gain
(dB)		 NF
(dB)		 OP1dB
(dBm)		 OIP3
(dBm)		 VD
(V)		 ID
(mA)
Balanced 1710-1785 11.3 5.5 35 42.5 5 1100
2000 9.8 7.1 34.5 43 5 1100
2200 9.2 6.8 35 41.5 5 1100
LTE 740 17.5 5.5 32.5 44 5 580
Other-1 1240 14 5.1 33 41.5 5 580
1280 13 5.1 33 41.5 5 580
Other-2 1600 12.5 5.0 32.5 45 5 580
1600 12.5 5.0 32.5 45 5 580
RFID (USA) 902 16.8 4.9 32.5 48 5 580
928 16 5.0 33 45 5 580
WCDMA-1 2000 10 5.0 33 43 5 580
WCDMA-2 2000 10.5 5.2 32 48 5 580
WLAN 2400 8.9 5.7 32.5 43.5 5 580